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Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh Photoresponsivity.
Lan, Hao-Yu; Hsieh, Yu-Hung; Chiao, Zong-Yi; Jariwala, Deep; Shih, Min-Hsiung; Yen, Ta-Jen; Hess, Ortwin; Lu, Yu-Jung.
Afiliación
  • Lan HY; Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan.
  • Hsieh YH; Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan.
  • Chiao ZY; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Jariwala D; Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan.
  • Shih MH; Department of Physics, National Taiwan University, Taipei 10617, Taiwan.
  • Yen TJ; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
  • Hess O; Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan.
  • Lu YJ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Nano Lett ; 21(7): 3083-3091, 2021 Apr 14.
Article en En | MEDLINE | ID: mdl-33761260
Monolayer transition metal dichalcogenides (TMDs), direct bandgap materials with an atomically thin nature, are promising materials for electronics and photonics, especially at highly scaled lateral dimensions. However, the characteristically low total absorption of photons in the monolayer TMD has become a challenge in the access to and realization of monolayer TMD-based high-performance optoelectronic functionalities and devices. Here, we demonstrate gate-tunable plasmonic phototransistors (photoFETs) that consist of monolayer molybdenum disulfide (MoS2) photoFETs integrated with the two-dimensional plasmonic crystals. The plasmonic photoFET has an ultrahigh photoresponsivity of 2.7 × 104 AW-1, achieving a 7.2-fold enhancement in the photocurrent compared to pristine photoFETs. This benefits predominately from the combination of the enhancement of the photon-absorption-rate via the strongly localized-electromagnetic-field and the gate-tunable plasmon-induced photocarrier-generation-rate in the monolayer MoS2. These results demonstrate a systematic methodology for designing ultrathin plasmon-enhanced photodetectors based on monolayer TMDs for next-generation ultracompact optoelectronic devices in the trans-Moore era.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos