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Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon.
Almadhoun, Mahmoud N; Speckbacher, Maximilian; Olsen, Brian C; Luber, Erik J; Sayed, Sayed Youssef; Tornow, Marc; Buriak, Jillian M.
Afiliación
  • Almadhoun MN; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada.
  • Speckbacher M; Molecular Electronics, Department of Electrical and Computer Engineering, Technical University of Munich, 80333 Munich, Germany.
  • Olsen BC; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada.
  • Luber EJ; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada.
  • Sayed SY; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada.
  • Tornow M; Molecular Electronics, Department of Electrical and Computer Engineering, Technical University of Munich, 80333 Munich, Germany.
  • Buriak JM; Center for NanoScience (CeNS), Ludwig-Maximilians-University, 80539 Munich, Germany.
Nano Lett ; 21(6): 2666-2674, 2021 Mar 24.
Article en En | MEDLINE | ID: mdl-33689381
In this work, native GaOx is positioned between bulk gallium and degenerately doped p-type silicon (p+-Si) to form Ga/GaOx/SiOx/p+-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 108 and retain the ON and OFF resistive states for up to 105 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: Canadá Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2021 Tipo del documento: Article País de afiliación: Canadá Pais de publicación: Estados Unidos