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High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient.
Aziz, Tariq; Wei, Shijing; Sun, Yun; Ma, Lai-Peng; Pei, Songfeng; Dong, Shichao; Ren, Wencai; Liu, Qi; Cheng, Hui-Ming; Sun, Dong-Ming.
Afiliación
  • Aziz T; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China.
  • Wei S; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China and Key Laboratory
  • Sun Y; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, S
  • Ma LP; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, S
  • Pei S; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, S
  • Dong S; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, S
  • Ren W; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, S
  • Liu Q; Frontier Institute of Chip and System, Fudan University, 2005 Shonghu Road, Shanghai 200433, P. R. China. qi_liu@fudan.edu.cn.
  • Cheng HM; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China and Tsinghua-Berkel
  • Sun DM; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. lpma@imr.ac.cn dmsun@imr.ac.cn and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, S
Nanoscale ; 13(4): 2448-2455, 2021 Feb 04.
Article en En | MEDLINE | ID: mdl-33464264

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nanoscale Año: 2021 Tipo del documento: Article Pais de publicación: Reino Unido

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nanoscale Año: 2021 Tipo del documento: Article Pais de publicación: Reino Unido