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High Current Density in Monolayer MoS2 Doped by AlOx.
McClellan, Connor J; Yalon, Eilam; Smithe, Kirby K H; Suryavanshi, Saurabh V; Pop, Eric.
Afiliación
  • McClellan CJ; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Yalon E; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Smithe KKH; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Suryavanshi SV; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Pop E; Electrical Engineering, Stanford University, Stanford, California 94305, United States.
ACS Nano ; 15(1): 1587-1596, 2021 Jan 26.
Article en En | MEDLINE | ID: mdl-33405894
Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low-temperature (<200 °C) substoichiometric AlOx provides a stable n-doping layer for monolayer MoS2, compatible with circuit integration. This approach achieves carrier densities >2 × 1013 cm-2, sheet resistance as low as ∼7 kΩ/□, and good contact resistance ∼480 Ω·µm in transistors from monolayer MoS2 grown by chemical vapor deposition. We also reach record current density of nearly 700 µA/µm (>110 MA/cm2) along this three-atom-thick semiconductor while preserving transistor on/off current ratio >106. The maximum current is ultimately limited by self-heating (SH) and could exceed 1 mA/µm with better device heat sinking. With their 0.1 nA/µm off-current, such doped MoS2 devices approach several low-power transistor metrics required by the international technology roadmap.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2021 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Nano Año: 2021 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos