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Study of Radiation-Induced Defects in p-Type Si1-xGex Diodes before and after Annealing.
Ceponis, Tomas; Lastovskii, Stanislau; Makarenko, Leonid; Pavlov, Jevgenij; Pukas, Kornelijus; Gaubas, Eugenijus.
Afiliación
  • Ceponis T; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio ave. 3, LT-10257 Vilnius, Lithuania.
  • Lastovskii S; Laboratory of Radiation Effects, Scientific-Practical Materials Research Centre of NAS of Belarus, P. Brovki Str.17, 220072 Minsk, Belarus.
  • Makarenko L; Department of Applied Mathematics and Computer Science, Belarusian State University, Independence Ave. 4, 220030 Minsk, Belarus.
  • Pavlov J; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio ave. 3, LT-10257 Vilnius, Lithuania.
  • Pukas K; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio ave. 3, LT-10257 Vilnius, Lithuania.
  • Gaubas E; Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio ave. 3, LT-10257 Vilnius, Lithuania.
Materials (Basel) ; 13(24)2020 Dec 12.
Article en En | MEDLINE | ID: mdl-33322844
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2020 Tipo del documento: Article País de afiliación: Lituania Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2020 Tipo del documento: Article País de afiliación: Lituania Pais de publicación: Suiza