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Self-Biased Bidomain LiNbO3/Ni/Metglas Magnetoelectric Current Sensor.
Bichurin, Mirza I; Petrov, Roman V; Leontiev, Viktor S; Sokolov, Oleg V; Turutin, Andrei V; Kuts, Victor V; Kubasov, Ilya V; Kislyuk, Alexander M; Temirov, Alexander A; Malinkovich, Mikhail D; Parkhomenko, Yuriy N.
Afiliación
  • Bichurin MI; Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia.
  • Petrov RV; Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia.
  • Leontiev VS; Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia.
  • Sokolov OV; Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia.
  • Turutin AV; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.
  • Kuts VV; Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal.
  • Kubasov IV; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.
  • Kislyuk AM; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.
  • Temirov AA; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.
  • Malinkovich MD; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.
  • Parkhomenko YN; Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.
Sensors (Basel) ; 20(24)2020 Dec 13.
Article en En | MEDLINE | ID: mdl-33322153
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2020 Tipo del documento: Article País de afiliación: Rusia Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
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XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2020 Tipo del documento: Article País de afiliación: Rusia Pais de publicación: Suiza