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Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET.
Lee, Kookjin; Kim, Yeonsu; Lee, Hyebin; Park, Sojeong; Lee, Yongwoo; Joo, Min-Kyu; Ji, Hyunjin; Lee, Jaewoo; Chun, Jungu; Sung, Moonsoo; Cho, Young-Hoon; Kim, Doyoon; Choi, Junhee; Lee, Jae Woo; Jeon, Dae-Young; Choi, Sung-Jin; Kim, Gyu-Tae.
Afiliación
  • Lee K; Imec, Leuven, Belgium.
  • Kim Y; Department of Materials Science, KU Leuven, Leuven, Belgium.
  • Lee H; School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
  • Park S; School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
  • Lee Y; Samsung Electronics Co. Ltd, 1 Samsung-ro, Yongin-si, Gyeonggi-do 17113, Republic of Korea.
  • Joo MK; School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
  • Ji H; School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of Korea.
  • Lee J; Department of Applied Physics, Sookmyung Women's University, Seoul 04310, Republic of Korea.
  • Chun J; School of Electrical Engineering, University of Ulsan, Republic of Korea.
  • Sung M; School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
  • Cho YH; School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
  • Kim D; Samsung Electronics Co. Ltd, 1 Samsung-ro, Yongin-si, Gyeonggi-do 17113, Republic of Korea.
  • Choi J; School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
  • Lee JW; SK Hynix, Gyeonggi-do, Icheon-si, Republic of Korea.
  • Jeon DY; Samsung Electronics Co. Ltd, 1 Samsung-ro, Yongin-si, Gyeonggi-do 17113, Republic of Korea.
  • Choi SJ; School of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
  • Kim GT; Defense agency for technology and quality, 420 Dongjin-ro, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea.
Nanotechnology ; 32(16): 165202, 2021 Apr 16.
Article en En | MEDLINE | ID: mdl-33302263
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article País de afiliación: Bélgica Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article País de afiliación: Bélgica Pais de publicación: Reino Unido