Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes.

Han, Young Joon; Kang, Kyung-Tae; Ju, Byeong-Kwon; Cho, Kwan Hyun

Han, Young Joon; Kang, Kyung-Tae; Ju, Byeong-Kwon; Cho, Kwan Hyun.

Afiliación

Han YJ; Manufacturing Process Platform Research and Development Department, Korea Institute of Industrial Technology (KITECH), 143 Hanggaul-ro, Sangnok-gu, Ansan-si 15588, Korea.
Kang KT; Department of Electrical and Electronics Engineering, College of Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea.
Ju BK; Manufacturing Process Platform Research and Development Department, Korea Institute of Industrial Technology (KITECH), 143 Hanggaul-ro, Sangnok-gu, Ansan-si 15588, Korea.
Cho KH; Department of Electrical and Electronics Engineering, College of Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea.

Materials (Basel) ; 13(21)2020 Nov 09.

Article en En | MEDLINE | ID: mdl-33182376

Palabras clave

intense-pulsed light (IPL); quantum-dot (QD); quantum-dot light-emitting diodes (QLEDs); zinc-oxide nanoparticles (ZnO NPs)

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2020 Tipo del documento: Article Pais de publicación: Suiza

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