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Record-Low Subthreshold-Swing Negative-Capacitance 2D Field-Effect Transistors.
Wang, Yang; Bai, Xiaoyuan; Chu, Junwei; Wang, Hongbo; Rao, Gaofeng; Pan, Xinqiang; Du, Xinchuan; Hu, Kai; Wang, Xuepeng; Gong, Chuanhui; Yin, Chujun; Yang, Chao; Yan, Chaoyi; Wu, Chunyang; Shuai, Yao; Wang, Xianfu; Liao, Min; Xiong, Jie.
Afiliación
  • Wang Y; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Bai X; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Chu J; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Wang H; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Rao G; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Pan X; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Du X; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Hu K; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Wang X; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Gong C; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Yin C; Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China.
  • Yang C; University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
  • Yan C; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Wu C; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Shuai Y; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Wang X; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Liao M; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Xiong J; Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, P. R. China.
Adv Mater ; 32(46): e2005353, 2020 Nov.
Article en En | MEDLINE | ID: mdl-33043512
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2020 Tipo del documento: Article Pais de publicación: Alemania
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2020 Tipo del documento: Article Pais de publicación: Alemania