Characteristics of silicon nitride deposited by very high frequency (162 MHz)-plasma enhanced atomic layer deposition using bis(diethylamino)silane.

Byun, J Y; Ji, Y J; Kim, K H; Kim, K S; Tak, H W; Ellingboe, A R; Yeom, G Y

Byun, J Y; Ji, Y J; Kim, K H; Kim, K S; Tak, H W; Ellingboe, A R; Yeom, G Y.

Afiliación

Byun JY; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea.
Ji YJ; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea.
Kim KH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea.
Kim KS; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea.
Tak HW; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, United States of America.
Ellingboe AR; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea.
Yeom GY; Plasma Research Laboratory, School of Physical Science, Dublin City University, Dublin, Ireland.

Nanotechnology ; 32(7): 075706, 2021 Feb 12.

Article en En | MEDLINE | ID: mdl-32942270

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article Pais de publicación: Reino Unido

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