Bandgap Engineering of Hydroxy-Functionalized Borophene for Superior Photo-Electrochemical Performance.

Wang, Xin; Liang, Junwu; You, Qi; Zhu, Jiaqi; Fang, Feier; Xiang, Yuanjiang; Song, Jun

Wang, Xin; Liang, Junwu; You, Qi; Zhu, Jiaqi; Fang, Feier; Xiang, Yuanjiang; Song, Jun.

Afiliación

Wang X; Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen, 518060, China.
Liang J; School of Physics and Telecommunication Engineering, Yulin Normal University, Yulin, 537000, China.
You Q; Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen, 518060, China.
Zhu J; Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen, 518060, China.
Fang F; Institute of Microscale Optoelectronics (IMO), Shenzhen University, Shenzhen, 518060, China.
Xiang Y; School of Physics and Electronics, Hunan University, Changsha, 410082, China.
Song J; College of Physics and Optoelectronic Engineering, Key Lab of Optoelectronic Devices and Systems of Ministry of Education/Guangdong Province, Shenzhen University, Shenzhen, 518060, China.

Angew Chem Int Ed Engl ; 59(52): 23559-23563, 2020 Dec 21.

Article en En | MEDLINE | ID: mdl-32940389

Palabras clave

bandgap engineering; boron; borophene; photodetector; two-dimensional semiconductor

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Angew Chem Int Ed Engl Año: 2020 Tipo del documento: Article País de afiliación: China Pais de publicación: Alemania

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