Comprehensive Analysis of Metal Modulated Epitaxial GaN.

Ahmad, Habib; Motoki, Keisuke; Clinton, Evan A; Matthews, Christopher M; Engel, Zachary; Doolittle, W Alan

Ahmad, Habib; Motoki, Keisuke; Clinton, Evan A; Matthews, Christopher M; Engel, Zachary; Doolittle, W Alan.

Afiliación

Ahmad H; School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr NW, Atlanta, Georgia 30332-0250, United States.
Motoki K; School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr NW, Atlanta, Georgia 30332-0250, United States.
Clinton EA; School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr NW, Atlanta, Georgia 30332-0250, United States.
Matthews CM; School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr NW, Atlanta, Georgia 30332-0250, United States.
Engel Z; School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr NW, Atlanta, Georgia 30332-0250, United States.
Doolittle WA; School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr NW, Atlanta, Georgia 30332-0250, United States.

ACS Appl Mater Interfaces ; 12(33): 37693-37712, 2020 Aug 19.

Article en En | MEDLINE | ID: mdl-32706570

Palabras clave

Ga flashing; Ga/N ratio; TEM; UID GaN; XRD; excess Ga dose; growth temperature; metal modulated epitaxy

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2020 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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