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A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory.
Kim, Kwan-Ho; Park, Hyung-Youl; Shim, Jaewoo; Shin, Gicheol; Andreev, Maksim; Koo, Jiwan; Yoo, Gwangwe; Jung, Kilsu; Heo, Keun; Lee, Yoonmyung; Yu, Hyun-Yong; Kim, Kyung Rok; Cho, Jeong Ho; Lee, Sungjoo; Park, Jin-Hong.
Afiliación
  • Kim KH; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu.
  • Park HY; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu.
  • Shim J; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, USA.
  • Shin G; Department of Semiconductor System Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Andreev M; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu.
  • Koo J; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu.
  • Yoo G; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu.
  • Jung K; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu.
  • Heo K; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu.
  • Lee Y; Department of Semiconductor System Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Yu HY; School of Electrical Engineering, Korea University, Seoul 02841, Korea.
  • Kim KR; School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea.
  • Cho JH; Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea.
  • Lee S; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.
  • Park JH; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea. jhpark9@skku.edu and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.
Nanoscale Horiz ; 5(4): 654-662, 2020 Mar 30.
Article en En | MEDLINE | ID: mdl-32226980
For increasing the restricted bit-density in the conventional binary logic system, extensive research efforts have been directed toward implementing single devices with a two threshold voltage (VTH) characteristic via the single negative differential resistance (NDR) phenomenon. In particular, recent advances in forming van der Waals (vdW) heterostructures with two-dimensional crystals have opened up new possibilities for realizing such NDR-based tunneling devices. However, it has been challenging to exhibit three VTH through the multiple-NDR (m-NDR) phenomenon in a single device even by using vdW heterostructures. Here, we show the m-NDR device formed on a BP/(ReS2 + HfS2) type-III double-heterostructure. This m-NDR device is then integrated with a vdW transistor to demonstrate a ternary vdW latch circuit capable of storing three logic states. Finally, the ternary latch is extended toward ternary SRAM, and its high-speed write and read operations are theoretically verified.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nanoscale Horiz Año: 2020 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nanoscale Horiz Año: 2020 Tipo del documento: Article Pais de publicación: Reino Unido