Nitrogen-Doped Graphene: The Influence of Doping Level on the Charge-Transfer Resistance and Apparent Heterogeneous Electron Transfer Rate.

Coros, Maria; Varodi, Codruta; Pogacean, Florina; Gal, Emese; Pruneanu, Stela M

Coros, Maria; Varodi, Codruta; Pogacean, Florina; Gal, Emese; Pruneanu, Stela M.

Afiliación

Coros M; National Institute for Research and Development of Isotopic and Molecular Technologies, Donat Street, No. 67-103, 400293 Cluj-Napoca, Romania.
Varodi C; National Institute for Research and Development of Isotopic and Molecular Technologies, Donat Street, No. 67-103, 400293 Cluj-Napoca, Romania.
Pogacean F; National Institute for Research and Development of Isotopic and Molecular Technologies, Donat Street, No. 67-103, 400293 Cluj-Napoca, Romania.
Gal E; Department of Chemistry and Chemical Engineering, Hungarian Line of Study, Babes-Bolyai University, 11 Arany János St., 400028 Cluj-Napoca, Romania.
Pruneanu SM; National Institute for Research and Development of Isotopic and Molecular Technologies, Donat Street, No. 67-103, 400293 Cluj-Napoca, Romania.

Sensors (Basel) ; 20(7)2020 Mar 25.

Article en En | MEDLINE | ID: mdl-32218144

Palabras clave

apparent heterogeneous electron transfer rate; charge-transfer resistance; detection of 8-OHdG; modified electrodes; nitrogen-doped graphene

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2020 Tipo del documento: Article País de afiliación: Rumanía Pais de publicación: Suiza

Texto completo

Añadir a Mi BVS

Imprimir

XML

PubMed Links

Buscar en Google