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The Effect of Multi-Layer Stacking Sequence of TiOx Active Layers on the Resistive-Switching Characteristics of Memristor Devices.
Kim, Minho; Yoo, Kungsang; Jeon, Seong-Pil; Park, Sung Kyu; Kim, Yong-Hoon.
Afiliación
  • Kim M; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Yoo K; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Jeon SP; School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea.
  • Park SK; School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea.
  • Kim YH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Micromachines (Basel) ; 11(2)2020 Jan 30.
Article en En | MEDLINE | ID: mdl-32019257
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Guideline Idioma: En Revista: Micromachines (Basel) Año: 2020 Tipo del documento: Article Pais de publicación: Suiza
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Guideline Idioma: En Revista: Micromachines (Basel) Año: 2020 Tipo del documento: Article Pais de publicación: Suiza