Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application.

Kim, Taikyu; Yoo, Baekeun; Youn, Yong; Lee, Miso; Song, Aeran; Chung, Kwun-Bum; Han, Seungwu; Jeong, Jae Kyeong

Kim, Taikyu; Yoo, Baekeun; Youn, Yong; Lee, Miso; Song, Aeran; Chung, Kwun-Bum; Han, Seungwu; Jeong, Jae Kyeong.

Afiliación

Kim T; Department of Electronic Engineering , Hanyang University , Seoul 04763 , Korea.
Yoo B; Department of Electronic Engineering , Hanyang University , Seoul 04763 , Korea.
Youn Y; Department of Materials Science and Engineering and Research Institute of Advanced Materals , Seoul National University , Seoul 08826 , Korea.
Lee M; Department of Materials Science and Engineering and Research Institute of Advanced Materals , Seoul National University , Seoul 08826 , Korea.
Song A; Division of Physics and Semiconductor Science , Dongguk University , Seoul 04620 , Korea.
Chung KB; Division of Physics and Semiconductor Science , Dongguk University , Seoul 04620 , Korea.
Han S; Department of Materials Science and Engineering and Research Institute of Advanced Materals , Seoul National University , Seoul 08826 , Korea.
Jeong JK; Department of Electronic Engineering , Hanyang University , Seoul 04763 , Korea.

ACS Appl Mater Interfaces ; 11(43): 40214-40221, 2019 Oct 30.

Article en En | MEDLINE | ID: mdl-31577123

Palabras clave

Sn−Se−O; high mobility; p-type inorganic semiconductor; thermal stability; valence band engineering

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article Pais de publicación: Estados Unidos

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