Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices.

Chen, J; Woods, B D; Yu, P; Hocevar, M; Car, D; Plissard, S R; Bakkers, E P A M; Stanescu, T D; Frolov, S M

Chen, J; Woods, B D; Yu, P; Hocevar, M; Car, D; Plissard, S R; Bakkers, E P A M; Stanescu, T D; Frolov, S M.

Afiliación

Chen J; Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA.
Woods BD; Department of Electrical and Computer Engineering and Peterson Institute of NanoScience and Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, USA.
Yu P; Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, USA.
Hocevar M; Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA.
Car D; Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France.
Plissard SR; Eindhoven University of Technology, 5600 MB, Eindhoven, Netherlands.
Bakkers EPAM; LAAS CNRS, Université de Toulouse, 31031 Toulouse, France.
Stanescu TD; Eindhoven University of Technology, 5600 MB, Eindhoven, Netherlands.
Frolov SM; Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, USA.

Phys Rev Lett ; 123(10): 107703, 2019 Sep 06.

Article en En | MEDLINE | ID: mdl-31573319

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Phys Rev Lett Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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