Artificially Fabricated Subgap States for Visible-Light Absorption in Indium-Gallium-Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer.

Chung, Jusung; Tak, Young Jun; Kim, Won-Gi; Kang, Byung Ha; Kim, Hyun Jae

Chung, Jusung; Tak, Young Jun; Kim, Won-Gi; Kang, Byung Ha; Kim, Hyun Jae.

Afiliación

Chung J; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea.
Tak YJ; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea.
Kim WG; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea.
Kang BH; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea.
Kim HJ; School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 03722 , Korea.

ACS Appl Mater Interfaces ; 11(42): 38964-38972, 2019 Oct 23.

Article en En | MEDLINE | ID: mdl-31573177

Palabras clave

EHD printing; oxide phototransistor; oxide semiconductor; solution process; subgap states

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article Pais de publicación: Estados Unidos

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