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Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response.
Sahoo, Prasana Kumar; Memaran, Shahriar; Nugera, Florence Ann; Xin, Yan; Díaz Márquez, Tania; Lu, Zhengguang; Zheng, Wenkai; Zhigadlo, Nikolai D; Smirnov, Dmitry; Balicas, Luis; Gutiérrez, Humberto Rodríguez.
Afiliación
  • Sahoo PK; Department of Physics , University of South Florida , Tampa , Florida 33620 , United States.
  • Memaran S; National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States.
  • Nugera FA; Department of Physics , Florida State University , Tallahassee , Florida 32306 , United States.
  • Xin Y; Department of Physics , University of South Florida , Tampa , Florida 33620 , United States.
  • Díaz Márquez T; National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States.
  • Lu Z; Department of Physics , University of South Florida , Tampa , Florida 33620 , United States.
  • Zheng W; National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States.
  • Zhigadlo ND; Department of Physics , Florida State University , Tallahassee , Florida 32306 , United States.
  • Smirnov D; National High Magnetic Field Laboratory , Florida State University , Tallahassee , Florida 32310 , United States.
  • Balicas L; Department of Physics , Florida State University , Tallahassee , Florida 32306 , United States.
  • Gutiérrez HR; Department of Chemistry and Biochemistry , University of Bern , Bern 3012 , Switzerland.
ACS Nano ; 13(11): 12372-12384, 2019 Nov 26.
Article en En | MEDLINE | ID: mdl-31532628
Two-dimensional lateral heterojunctions based on monolayer transition-metal dichalcogenides (TMDs) have received increasing attention given that their direct band gap makes them very attractive for optoelectronic applications. Although bilayer TMDs present an indirect band gap, their electrical properties are expected to be less susceptible to ambient conditions, with higher mobilities and density of states when compared to monolayers. Bilayers and few-layers single domain devices have already demonstrated higher performance in radio frequency and photosensing applications. Despite these advantages, lateral heterostructures based on bilayer domains have been less explored. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2 monodomains. The heterojunctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layers. A phenomenological mechanism is proposed to explain the growth mode with self-limited thickness that happens within a certain window of growth conditions. With respect to their as-grown monolayer counterparts, bilayer lateral heterostructures yield nearly 1 order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ∼103 times larger than those extracted from the as-grown monolayers, in addition to room-temperature electroluminescence. The improved performance of bilayer heterostructures significantly expands the potential of two-dimensional materials for optoelectronics.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Qualitative_research Idioma: En Revista: ACS Nano Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Qualitative_research Idioma: En Revista: ACS Nano Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos