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InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K.
Kang, Soo Seok; Geum, Dae-Myeong; Kwak, Kisung; Kang, Ji-Hoon; Shim, Cheol-Hwee; Hyun, HyeYoung; Kim, Sang Hyeon; Choi, Won Jun; Choi, Suk-Ho; Park, Min-Chul; Song, Jin Dong.
Afiliación
  • Kang SS; Center for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
  • Geum DM; Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin, 17104, Republic of Korea.
  • Kwak K; Center for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
  • Kang JH; Center for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
  • Shim CH; Center for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
  • Hyun H; Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
  • Kim SH; Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
  • Choi WJ; Center for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
  • Choi SH; Center for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
  • Park MC; Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin, 17104, Republic of Korea.
  • Song JD; Center for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea. minchul@kist.re.kr.
Sci Rep ; 9(1): 12875, 2019 Sep 06.
Article en En | MEDLINE | ID: mdl-31492924
Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1-3 µm; however, they only capture a part of the region due to a cut-off wavelength of 1.7 µm. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick InxAl1-xAs graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of approximately 1.5-4 µm and its detectivity (D*) was 1.65 × 108 cm · Hz1/2 · W-1 at 3.3 µm. To demonstrate performance, the Sherlock Holmes mapping images were obtained using the photodetector at room temperature.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2019 Tipo del documento: Article Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2019 Tipo del documento: Article Pais de publicación: Reino Unido