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Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi_{2.1}Sr_{1.9}CaCu_{2.0}O_{8+δ} Superconductors.
Zhao, S Y Frank; Poccia, Nicola; Panetta, Margaret G; Yu, Cyndia; Johnson, Jedediah W; Yoo, Hyobin; Zhong, Ruidan; Gu, G D; Watanabe, Kenji; Taniguchi, Takashi; Postolova, Svetlana V; Vinokur, Valerii M; Kim, Philip.
Afiliación
  • Zhao SYF; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Poccia N; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Panetta MG; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Yu C; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Johnson JW; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Yoo H; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Zhong R; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA.
  • Gu GD; Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA.
  • Watanabe K; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
  • Taniguchi T; National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
  • Postolova SV; Institute for Physics of Microstructures RAS, Nizhny Novgorod 603950, Russia.
  • Vinokur VM; Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia.
  • Kim P; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Phys Rev Lett ; 122(24): 247001, 2019 Jun 21.
Article en En | MEDLINE | ID: mdl-31322397
We developed novel techniques to fabricate atomically thin Bi_{2.1}Sr_{1.9}CaCu_{2.0}O_{8+δ} van der Waals heterostructures down to two unit cells while maintaining a transition temperature T_{c} close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance R_{xy} as in the bulk system, spanning both below and above T_{c}. Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental R_{xy}(T,B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below T_{c}.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos