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The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion.
Roshko, Alexana; Brubaker, Matthew; Blanchard, Paul; Harvey, Todd; Bertness, Kris.
Afiliación
  • Roshko A; Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO 80305, USA.
  • Brubaker M; Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO 80305, USA.
  • Blanchard P; Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO 80305, USA.
  • Harvey T; Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO 80305, USA.
  • Bertness K; Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO 80305, USA.
Jpn J Appl Phys (2008) ; 58(SC)2019 06.
Article en En | MEDLINE | ID: mdl-31276121
The microstructure, polarity and Si distribution in AlN/GaN layers grown by plasma assisted molecular beam epitaxy (PAMBE) on Si(111) was assessed by scanning transmission electron microscopy (STEM). Samples grown under both metal- and nitrogen-rich conditions contained defects at the AlN/Si interface which suggest formation of an Al-Si eutectic. Correlated with this, interfacial segregation of Si was found in the samples. It is proposed that Si is dissolved in a eutectic layer floating on the AlN surface under metal-rich conditions. This Si is then incorporated into the film if the growth becomes nitrogen-rich, either intentionally or due to plasma source transients. These Si-rich layers appear to induce inversion of the nitride from nitrogen- to metal-polarity, and uncontrolled variations in the Si concentration cause occasional nonuniformity in the resulting inversion.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Jpn J Appl Phys (2008) Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Japón
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Jpn J Appl Phys (2008) Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Japón