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Sn-Doping Enhanced Ultrahigh Mobility In1-xSnxSe Phototransistor.
Paul Inbaraj, Christy Roshini; Gudelli, Vijay Kumar; Mathew, Roshan Jesus; Ulaganathan, Rajesh Kumar; Sankar, Raman; Lin, Hsia Yu; Lin, Hung-I; Liao, Yu-Ming; Cheng, Hao-Yu; Lin, Kung-Hsuan; Chou, Fang Cheng; Chen, Yit-Tsong; Lee, Chih-Hao; Guo, Guang-Yu; Chen, Yang-Fang.
Afiliación
  • Paul Inbaraj CR; Department of Engineering and System Science , National Tsing Hua University , Hsinchu 30013 , Taiwan.
  • Gudelli VK; Physics Division , National Center for Theoretical Sciences , Hsinchu 30013 , Taiwan.
  • Mathew RJ; Department of Engineering and System Science , National Tsing Hua University , Hsinchu 30013 , Taiwan.
  • Ulaganathan RK; Institute of Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan.
  • Lee CH; Institute of Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan.
  • Guo GY; Department of Engineering and System Science , National Tsing Hua University , Hsinchu 30013 , Taiwan.
  • Chen YF; Physics Division , National Center for Theoretical Sciences , Hsinchu 30013 , Taiwan.
ACS Appl Mater Interfaces ; 11(27): 24269-24278, 2019 Jul 10.
Article en En | MEDLINE | ID: mdl-31250634
Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In1-xSnxSe phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In1-xSnxSe flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In1-xSnxSe crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In1-xSnxSe have higher mobility than in InSe. The internally boosted electrical properties of In1-xSnxSe exhibit ultrahigh mobility of 2560 ± 240 cm2 V-1 s-1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In1-xSnxSe flakes are highly sensitive with a detectivity of 1014 Jones. It possesses a large photoresponsivity and photogain (Vg = 40 V) as high as 3 × 105 A W-1 and 0.5 × 106, respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In1-xSnxSe-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos
Texto completo
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Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2019 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos