Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate.

Kim, Jongmyeong; Lee, Seungmin; Oh, Jehong; Ryu, Jungel; Park, Yongjo; Park, Seoung-Hwan; Yoon, Euijoon

Kim, Jongmyeong; Lee, Seungmin; Oh, Jehong; Ryu, Jungel; Park, Yongjo; Park, Seoung-Hwan; Yoon, Euijoon.

Afiliación

Kim J; Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea.
Lee S; Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea.
Oh J; Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea.
Ryu J; Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea.
Park Y; Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea.
Park SH; Department of Electronics Engineering, Catholic University of Daegu, Gyeongbuk, 38430, Korea.
Yoon E; Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea. eyoon@snu.ac.kr.

Sci Rep ; 9(1): 8282, 2019 Jun 04.

Article en En | MEDLINE | ID: mdl-31164674

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2019 Tipo del documento: Article Pais de publicación: Reino Unido

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