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Analysis of Variation and Ferroelectric Layer Thickness on Negative Capacitance Nanowire Field-Effect Transistor.
Lee, Jang Kyu; Woo, Changbeom; Kim, Jongsu; Kang, Myounggon; Jeon, Jongwook; Shin, Hyungcheol.
Afiliación
  • Lee JK; Inter University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
  • Woo C; Inter University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
  • Kim J; Inter University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
  • Kang M; Department of Electronics Engineering, Korea National University of Transportation, Chungju, 380-702, Korea.
  • Jeon J; Department of Electronics Engineering, Konkuk University, Seoul 05029, Korea.
  • Shin H; Inter University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
J Nanosci Nanotechnol ; 19(10): 6710-6714, 2019 Oct 01.
Article en En | MEDLINE | ID: mdl-31027015
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article Pais de publicación: Estados Unidos