Relation of Dielectric Constants and Chemical Structures of Low Dielectric Constant SiCOH Films Deposited by Using Octamethylcyclotetrasiloxane and Tetraethylorthosilicate Precursors.

Park, Yoonsoo; Kwon, Sungyool; Ban, Wonjin; Lim, Hyuna; Jung, Donggeun

Park, Yoonsoo; Kwon, Sungyool; Ban, Wonjin; Lim, Hyuna; Jung, Donggeun.

Afiliación

Park Y; Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Kwon S; Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Ban W; Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Lim H; Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Jung D; Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 16419, Republic of Korea.

J Nanosci Nanotechnol ; 19(10): 6271-6276, 2019 Oct 01.

Article en En | MEDLINE | ID: mdl-31026947

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2019 Tipo del documento: Article Pais de publicación: Estados Unidos

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