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Effects of Offset Pixel Aperture Width on the Performances of Monochrome CMOS Image Sensors for Depth Extraction.
Lee, Jimin; Choi, Byoung-Soo; Kim, Sang-Hwan; Lee, Jewon; Lee, Junwoo; Chang, Seunghyuk; Park, JongHo; Lee, Sang-Jin; Shin, Jang-Kyoo.
Afiliación
  • Lee J; School of Electronics Engineering, Kyungpook National University, 80 Deahak-ro, Buk-gu, Daegu 41566, Korea. jmLee@ee.knu.ac.kr.
  • Choi BS; School of Electronics Engineering, Kyungpook National University, 80 Deahak-ro, Buk-gu, Daegu 41566, Korea. bschoi@ee.knu.ac.kr.
  • Kim SH; School of Electronics Engineering, Kyungpook National University, 80 Deahak-ro, Buk-gu, Daegu 41566, Korea. shkim7@knu.ac.kr.
  • Lee J; School of Electronics Engineering, Kyungpook National University, 80 Deahak-ro, Buk-gu, Daegu 41566, Korea. jewonlee@knu.ac.kr.
  • Lee J; School of Electronics Engineering, Kyungpook National University, 80 Deahak-ro, Buk-gu, Daegu 41566, Korea. junwoolee@knu.ac.kr.
  • Chang S; Center for Integrated Smart Sensors, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea. schang71@kaist.ac.kr.
  • Park J; Center for Integrated Smart Sensors, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea. parkjh20@kaist.ac.kr.
  • Lee SJ; Center for Integrated Smart Sensors, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea. sjlee82@kaist.ac.kr.
  • Shin JK; School of Electronics Engineering, Kyungpook National University, 80 Deahak-ro, Buk-gu, Daegu 41566, Korea. jkshin@ee.knu.ac.kr.
Sensors (Basel) ; 19(8)2019 Apr 16.
Article en En | MEDLINE | ID: mdl-30995801
This paper presents the effects of offset pixel aperture width on the performance of monochrome (MONO) CMOS image sensors (CISs) for a three-dimensional image sensor. Using a technique to integrate the offset pixel aperture (OPA) inside each pixel, the depth information can be acquired using a disparity from OPA patterns. The OPA is classified into two pattern types: Left-offset pixel aperture (LOPA) and right-offset pixel aperture (ROPA). These OPAs are divided into odd and even rows and integrated in a pixel array. To analyze the correlation between the OPA width and the sensor characteristics, experiments were conducted by configuring the test elements group (TEG) regions. The OPA width of the TEG region for the measurement varied in the range of 0.3-0.5 µm. As the aperture width decreased, the disparity of the image increased, while the sensitivity decreased. It is possible to acquire depth information by the disparity obtained from the proposed MONO CIS using the OPA technique without an external light source. Therefore, the proposed MONO CIS with OPA could easily be applied to miniaturized devices. The proposed MONO CIS was designed and manufactured using the 0.11 µm CIS process.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2019 Tipo del documento: Article Pais de publicación: Suiza

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2019 Tipo del documento: Article Pais de publicación: Suiza