Reversible defect engineering in graphene grain boundaries.

Balasubramanian, Krishna; Biswas, Tathagatha; Ghosh, Priyadarshini; Suran, Swathi; Mishra, Abhishek; Mishra, Rohan; Sachan, Ritesh; Jain, Manish; Varma, Manoj; Pratap, Rudra; Raghavan, Srinivasan

Balasubramanian, Krishna; Biswas, Tathagatha; Ghosh, Priyadarshini; Suran, Swathi; Mishra, Abhishek; Mishra, Rohan; Sachan, Ritesh; Jain, Manish; Varma, Manoj; Pratap, Rudra; Raghavan, Srinivasan.

Afiliación

Balasubramanian K; Center for Nanoscience and Engineering, Indian Institute of Science, Bangalore, 560012, India.
Biswas T; Electrical Engineering, Technion Israel Institute of Technology, Haifa, 3200003, Israel.
Ghosh P; Physics Department, Indian Institute of Science, Bangalore, 560012, India.
Suran S; Center for Nanoscience and Engineering, Indian Institute of Science, Bangalore, 560012, India.
Mishra A; Materials Research Center, Indian Institute of Science, Bangalore, 560012, India.
Mishra R; Materials Engineering, Technion Israel Institute of Technology, Haifa, 3200003, Israel.
Sachan R; Center for Nanoscience and Engineering, Indian Institute of Science, Bangalore, 560012, India.
Jain M; Center for Nanoscience and Engineering, Indian Institute of Science, Bangalore, 560012, India.
Varma M; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, Washington, MO, 63130, USA.
Pratap R; Material Science and Technology division, Oak Ridge National Laboratory, Tennessee, 37831, USA.
Raghavan S; School of Mechanical and Aerospace Engineering, Oklahoma State University, Stillwater, 74078, OK, USA.

Nat Commun ; 10(1): 1090, 2019 03 06.

Article en En | MEDLINE | ID: mdl-30842414

RESUMEN

Research efforts in large area graphene synthesis have been focused on increasing grain size. Here, it is shown that, beyond 1 µm grain size, grain boundary engineering determines the electronic properties of the monolayer. It is established by chemical vapor deposition experiments and first-principle calculations that there is a thermodynamic correlation between the vapor phase chemistry and carbon potential at grain boundaries and triple junctions. As a result, boundary formation can be controlled, and well-formed boundaries can be intentionally made defective, reversibly. In 100 µm long channels this aspect is demonstrated by reversibly changing room temperature electronic mobilities from 1000 to 20,000 cm2 V-1 s-1. Water permeation experiments show that changes are localized to grain boundaries. Electron microscopy is further used to correlate the global vapor phase conditions and the boundary defect types. Such thermodynamic control is essential to enable consistent growth and control of two-dimensional layer properties over large areas.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2019 Tipo del documento: Article País de afiliación: India Pais de publicación: Reino Unido

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