Surface Engineering of Room Temperature-Grown Inorganic Perovskite Quantum Dots for Highly Efficient Inverted Light-Emitting Diodes.
ACS Appl Mater Interfaces
; 10(49): 42647-42656, 2018 Dec 12.
Article
en En
| MEDLINE
| ID: mdl-30419162
Inorganic cesium lead bromide quantum dots (CsPbBr3 QDs) are usually synthesized via a high-temperature process (hot injection, HI). This process is similar to that used for the synthesis of other semiconductor QDs (i.e., CdSe@ZnS), which limits their potential cost advantage. CsPbBr3 QDs can also be synthesized at room temperature (RT) in a low cost and easily scalable process, which, thus, is one of the greatest advantages of the CsPbBr3 QDs. However, light-emitting diodes (LEDs) fabricated using RT-QDs exhibit poor performance compared to those of HI-QDs. In fact, QDs are surrounded by insulating ligands to maintain their colloidal stability but these ligands need to be removed to obtain high-performance LEDs. Here, we show that ligand removal techniques used for HI-QDs are not sufficient in the case of RT-QDs. Additional ligand engineering and annealing steps are necessary to remove the excess of ligands from RT-QD films while preventing the coalescence of the QDs. The eventual surface defects induced by annealing can be healed by a subsequent photoactivation step. Moreover, the use of solution processable inorganic charge transport layers can reduce the fabrication costs of LEDs. We fabricated an inverted LED based on a metal oxide electron transport layer and a RT-QD emitting layer which exhibited a maximum current efficiency of 17.61 cd A-1 and a maximum luminance of 22 825 cd m-2.
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1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
ACS Appl Mater Interfaces
Asunto de la revista:
BIOTECNOLOGIA
/
ENGENHARIA BIOMEDICA
Año:
2018
Tipo del documento:
Article
País de afiliación:
Corea del Sur
Pais de publicación:
Estados Unidos