Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS<sub>2</sub> Three-Dimensional-Two-Dimensional Heterostructure.

Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; Woo, Youngjun; Lee, Jae Eun; Choi, Sung-Yool

Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS₂ Three-Dimensional-Two-Dimensional Heterostructure.

Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; Woo, Youngjun; Lee, Jae Eun; Choi, Sung-Yool.

Afiliación

Shin GH; School of Electrical Engineering, Graphene/2D Materials Research Center , KAIST , Daehak-ro , Daejeon 34141 , Republic of Korea.
Koo B; School of Electrical Engineering, Graphene/2D Materials Research Center , KAIST , Daehak-ro , Daejeon 34141 , Republic of Korea.
Park H; System LSI, Samsung Electronics , Samsung-ro , Giheung-gu, Yongin-Si , Gyeonggi-do 17113 , Republic of Korea.
Woo Y; School of Electrical Engineering, Graphene/2D Materials Research Center , KAIST , Daehak-ro , Daejeon 34141 , Republic of Korea.
Lee JE; School of Electrical Engineering, Graphene/2D Materials Research Center , KAIST , Daehak-ro , Daejeon 34141 , Republic of Korea.
Choi SY; School of Electrical Engineering, Graphene/2D Materials Research Center , KAIST , Daehak-ro , Daejeon 34141 , Republic of Korea.

ACS Appl Mater Interfaces ; 10(46): 40212-40218, 2018 Nov 21.

Article en En | MEDLINE | ID: mdl-30358385

Palabras clave

MoS2; heterostructure; silicon; steep-slope device; tunneling transistor

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article Pais de publicación: Estados Unidos

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