Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell.

Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen

Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen.

Afiliación

Simanjuntak FM; Department of Electrical Engineering, National Dong Hwa University, Hualien, 97401, Taiwan.
Chandrasekaran S; Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu, 30010, Taiwan.
Lin CC; Department of Electrical Engineering, National Dong Hwa University, Hualien, 97401, Taiwan. chunchieh@gms.ndhu.edu.tw.
Tseng TY; Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 30010, Taiwan. tseng@cc.nctu.edu.tw.

Nanoscale Res Lett ; 13(1): 327, 2018 Oct 19.

Article en En | MEDLINE | ID: mdl-30341697

Palabras clave

PMC; Programmable metallization devices; Resistive switching; Zinc peroxide

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2018 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos

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