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Amorphous Phosphorus-Doped Cobalt Sulfide Modified on Silicon Pyramids for Efficient Solar Water Reduction.
Chen, Chih-Jung; Liu, Chi-Wei; Yang, Kai-Chih; Yin, Li-Chang; Wei, Da-Hua; Hu, Shu-Fen; Liu, Ru-Shi.
Afiliación
  • Chen CJ; Department of Chemistry , National Taiwan University , Taipei 10617 , Taiwan.
  • Liu CW; Department of Mechanical Engineering and Graduate Institute of Manufacturing Technology , National Taipei University of Technology , Taipei 10608 , Taiwan.
  • Yang KC; Department of Physics , National Taiwan Normal University , Taipei 11677 , Taiwan.
  • Yin LC; Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Shenyang 110016 , China.
  • Wei DH; Department of Mechanical Engineering and Graduate Institute of Manufacturing Technology , National Taipei University of Technology , Taipei 10608 , Taiwan.
  • Hu SF; Department of Physics , National Taiwan Normal University , Taipei 11677 , Taiwan.
  • Liu RS; Department of Chemistry , National Taiwan University , Taipei 10617 , Taiwan.
ACS Appl Mater Interfaces ; 10(43): 37142-37149, 2018 Oct 31.
Article en En | MEDLINE | ID: mdl-30296046
Cobalt sulfide (CoS x) functioned as a co-catalyst to accelerate the kinetics of photogenerated electrons on Si photocathode, leading to the enhancement of solar hydrogen evolution efficiency. By doping phosphorus heteroatoms, CoS x materials showed an improved catalytic activity because of superior surface area and quantity of active sites. Furthermore, increased vacancies in unoccupied electronic states were observed, as more phosphorus atoms doped into CoS x co-catalysts. Although these vacant sites improved the capability to accept photoinduced electrons from Si photoabsorber, chemisorption energy of atomic hydrogen on catalysts was the dominant factor affecting in photoelectrochemical performance. We suggested that P-doped CoS x with appropriate doping quantities showed thermoneutral hydrogen adsorption. Excess phosphorus dopants in CoS x contributed to excessively strong adsorption with H atoms, causing the poor consecutive desorption ability of photocatalytic reaction. The optimal P-doped CoS x-decorated Si photocathode showed a photocurrent of -20.6 mA cm-2 at 0 V. Moreover, a TiO2 thin film was deposited on the Si photocathode as a passivation layer for improving the durability. The current density of 10 nm TiO2-modified photocathode remained at approximately -13.3 mA cm-2 after 1 h of chronoamperometry.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article País de afiliación: Taiwán Pais de publicación: Estados Unidos