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Composition dependence of penetration range and backscattering coefficient of electrons impinging on SixGe1-x and GaAsxN1-x semiconducting alloys.
Khan, M Ajmal; Algarni, H; Bouarissa, N; Al-Hagan, O A; Alhuwaymel, T F.
Afiliación
  • Khan MA; Department of Physics, Faculty of Science, King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia.
  • Algarni H; Department of Physics, Faculty of Science, King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia; Research Center for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia.
  • Bouarissa N; Laboratory of Materials Physics and Its Applications, University of M'sila, M'sila 28000, Algeria. Electronic address: n_bouarissa@yahoo.fr.
  • Al-Hagan OA; Department of Physics, Faculty of Science, King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia.
  • Alhuwaymel TF; National Centre for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), P. O. Box 6086, Riyadh 11442, Saudi Arabia.
Ultramicroscopy ; 195: 53-57, 2018 12.
Article en En | MEDLINE | ID: mdl-30193226
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Ultramicroscopy Año: 2018 Tipo del documento: Article País de afiliación: Arabia Saudita Pais de publicación: Países Bajos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Ultramicroscopy Año: 2018 Tipo del documento: Article País de afiliación: Arabia Saudita Pais de publicación: Países Bajos