Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy.

Omika, Keiichi; Tateno, Yasunori; Kouchi, Tsuyoshi; Komatani, Tsutomu; Yaegassi, Seiji; Yui, Keiichi; Nakata, Ken; Nagamura, Naoka; Kotsugi, Masato; Horiba, Koji; Oshima, Masaharu; Suemitsu, Maki; Fukidome, Hirokazu

Omika, Keiichi; Tateno, Yasunori; Kouchi, Tsuyoshi; Komatani, Tsutomu; Yaegassi, Seiji; Yui, Keiichi; Nakata, Ken; Nagamura, Naoka; Kotsugi, Masato; Horiba, Koji; Oshima, Masaharu; Suemitsu, Maki; Fukidome, Hirokazu.

Afiliación

Omika K; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
Tateno Y; Sumitomo Electric Industries, Ltd., Osaka, Japan.
Kouchi T; Sumitomo Electric Industries, Ltd., Osaka, Japan.
Komatani T; Sumitomo Electric Device Innovations, Inc., Yokohama, Japan.
Yaegassi S; Sumitomo Electric Industries, Ltd., Osaka, Japan.
Yui K; Sumitomo Electric Industries, Ltd., Osaka, Japan.
Nakata K; Sumitomo Electric Industries, Ltd., Osaka, Japan.
Nagamura N; National Institute for Materials Science, Tsukuba, Japan.
Kotsugi M; Tokyo University of Science, Tokyo, Japan.
Horiba K; Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Japan.
Oshima M; Synchrotron Radiation Research Organization, The University of Tokyo, Tokyo, Japan.
Suemitsu M; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
Fukidome H; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. fukidome@riec.tohoku.ac.jp.

Sci Rep ; 8(1): 13268, 2018 Sep 05.

Article en En | MEDLINE | ID: mdl-30185804

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Reino Unido

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