Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation.

Lee, Minuk; Jo, Jeong-Wan; Kim, Yoon-Jeong; Choi, Seungbeom; Kwon, Sung Min; Jeon, Seong Pil; Facchetti, Antonio; Kim, Yong-Hoon; Park, Sung Kyu

Lee, Minuk; Jo, Jeong-Wan; Kim, Yoon-Jeong; Choi, Seungbeom; Kwon, Sung Min; Jeon, Seong Pil; Facchetti, Antonio; Kim, Yong-Hoon; Park, Sung Kyu.

Afiliación

Lee M; School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, 06974, Korea.
Jo JW; School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, 06974, Korea.
Kim YJ; School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, 06974, Korea.
Choi S; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea.
Kwon SM; School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, 06974, Korea.
Jeon SP; School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, 06974, Korea.
Facchetti A; Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.
Kim YH; Flexterra Corporation, 8025 Lamon Avenue, Skokie, IL, 60077, USA.
Park SK; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea.

Adv Mater ; : e1804120, 2018 Aug 27.

Article en En | MEDLINE | ID: mdl-30152085

Palabras clave

TCAD simulations; corrugated structures; heterointerfaces; metal-oxide thin-film transistors; solution processes

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2018 Tipo del documento: Article Pais de publicación: Alemania

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