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Potential Dip in Organic Photovoltaics Probed by Cross-sectional Kelvin Probe Force Microscopy.
Lee, Jongjin; Kong, Jaemin.
Afiliación
  • Lee J; Department of Physics and Research Institute for Green Energy Convergence Technology (RIGET), Gyeongsang National University, Jinju, 660-701, South Korea. bandy1@gnu.ac.kr.
  • Kong J; Department of Chemical and Biomolecular Engineering, NYU Tandon School of Engineering, 6 MetroTech Center, Brooklyn, NY, 11201, USA.
Nanoscale Res Lett ; 13(1): 228, 2018 Aug 01.
Article en En | MEDLINE | ID: mdl-30069714
Cross-sectional potential distribution of high open-circuit voltage bulk heterojunction photovoltaic device was measured using Kelvin probe force microscopy. Potential drop confined at cathode interface implies that photo-active layer is an effective p-type semiconductor. Potential values in field-free region show wide variation according to log-normal distribution. This potential dip prone to have holes captured during the diffusive motion, which can increase bimolecular recombination, while potential gradient in depletion region makes this potential dip smaller and the captured holes easily escape from dip region by Schottky barrier lowering.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prevalence_studies Idioma: En Revista: Nanoscale Res Lett Año: 2018 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prevalence_studies Idioma: En Revista: Nanoscale Res Lett Año: 2018 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Estados Unidos