Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a-InGaZnO at 45 °C.

Bermundo, Juan Paolo S; Ishikawa, Yasuaki; Fujii, Mami N; Ikenoue, Hiroshi; Uraoka, Yukiharu

Bermundo, Juan Paolo S; Ishikawa, Yasuaki; Fujii, Mami N; Ikenoue, Hiroshi; Uraoka, Yukiharu.

Afiliación

Bermundo JPS; Graduate School of Materials Science , Nara Institute of Science and Technology , 8916-5 Takayama , Ikoma , Nara 630-0192 , Japan.
Ishikawa Y; Graduate School of Materials Science , Nara Institute of Science and Technology , 8916-5 Takayama , Ikoma , Nara 630-0192 , Japan.
Fujii MN; Graduate School of Materials Science , Nara Institute of Science and Technology , 8916-5 Takayama , Ikoma , Nara 630-0192 , Japan.
Ikenoue H; Department of Gigaphoton Next GLP , Kyushu University , 744 Motooka , Nishi-ku, Fukuoka 819-0395 , Japan.
Uraoka Y; Graduate School of Materials Science , Nara Institute of Science and Technology , 8916-5 Takayama , Ikoma , Nara 630-0192 , Japan.

ACS Appl Mater Interfaces ; 10(29): 24590-24597, 2018 Jul 25.

Article en En | MEDLINE | ID: mdl-29927571

Palabras clave

a-IGZO; conductivity enhancement; laser annealing; oxide semiconductor; rapid and low temperature process; transparent conductor

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article País de afiliación: Japón Pais de publicación: Estados Unidos

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