Quantifying the Short-Range Order in Amorphous Silicon by Raman Scattering.
Anal Chem
; 90(13): 8123-8129, 2018 07 03.
Article
en En
| MEDLINE
| ID: mdl-29889501
Quantification of the short-range order in amorphous silicon has been formulized using Raman scattering by taking into account established frameworks for studying the spectral line-shape and size dependent Raman peak shift. A theoretical line-shape function has been proposed for representing the observed Raman scattering spectrum from amorphous-Si-based on modified phonon confinement model framework. While analyzing modified phonon confinement model, the term "confinement size" used in the context of nanocrystalline Si was found analogous to the short-range order distance in a-Si thus enabling one to quantify the same using Raman scattering. Additionally, an empirical formula has been proposed using bond polarizability model for estimating the short-range order making one capable to quantify the distance of short-range order by looking at the Raman peak position alone. Both the proposals have been validated using three different data sets reported by three different research groups from a-Si samples prepared by three different methods making the analysis universal.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Anal Chem
Año:
2018
Tipo del documento:
Article
País de afiliación:
India
Pais de publicación:
Estados Unidos