Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN <sub>x</sub> Grown by Low-Pressure Chemical Vapor Deposition.

Liu, Xinyu; Wang, Xinhua; Zhang, Yange; Wei, Ke; Zheng, Yingkui; Kang, Xuanwu; Jiang, Haojie; Li, Junfeng; Wang, Wenwu; Wu, Xuebang; Wang, Xianping; Huang, Sen

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN _x Grown by Low-Pressure Chemical Vapor Deposition.

Liu, Xinyu; Wang, Xinhua; Zhang, Yange; Wei, Ke; Zheng, Yingkui; Kang, Xuanwu; Jiang, Haojie; Li, Junfeng; Wang, Wenwu; Wu, Xuebang; Wang, Xianping; Huang, Sen.

Afiliación

Liu X; High-Frequency High-Voltage Device and Integrated Circuits R&D Center , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Wang X; High-Frequency High-Voltage Device and Integrated Circuits R&D Center , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Zhang Y; Key Laboratory of Microelectronic Devices & Integrated Technology , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Wei K; Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , China.
Zheng Y; High-Frequency High-Voltage Device and Integrated Circuits R&D Center , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Kang X; High-Frequency High-Voltage Device and Integrated Circuits R&D Center , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Jiang H; High-Frequency High-Voltage Device and Integrated Circuits R&D Center , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Li J; Integrated Circuit Advanced Process Center , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Wang W; Integrated Circuit Advanced Process Center , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Wu X; Integrated Circuit Advanced Process Center , Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029 , China.
Wang X; Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , China.
Huang S; Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , China.

ACS Appl Mater Interfaces ; 10(25): 21721-21729, 2018 Jun 27.

Article en En | MEDLINE | ID: mdl-29863840

Palabras clave

GaN; LPCVD-SiNx; Si2N2O; capture cross section; constant-capacitance deep-level transient Fourier spectroscopy; first principles; interface states; near-conduction band states

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos

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