Facilitated extrinsic majority carrier depletion and photogenerated exciton dissociation in an annealing-free ZnO:C photodetector.

Zhang, Dezhong; Liu, Chunyu; Li, Kanzhe; Chen, Yu; Ruan, Shengping; Zhang, Xindong; Li, Chuannan

Zhang, Dezhong; Liu, Chunyu; Li, Kanzhe; Chen, Yu; Ruan, Shengping; Zhang, Xindong; Li, Chuannan.

Afiliación

Zhang D; State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, P. R. China. ruansp@jlu.edu.cn.
Liu C; State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, P. R. China. ruansp@jlu.edu.cn.
Li K; College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China.
Chen Y; College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China.
Ruan S; State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012, P. R. China. ruansp@jlu.edu.cn.
Zhang X; College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China.
Li C; College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China.

Nanoscale ; 10(14): 6459-6466, 2018 Apr 05.

Article en En | MEDLINE | ID: mdl-29565440

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2018 Tipo del documento: Article Pais de publicación: Reino Unido

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