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Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO3 Thin Films.
Chung, Min Jung; Jeon, Woojin; An, Cheol Hyun; Kim, Sang Hyeon; Lee, Yoon Kyeung; Lee, Woongkyu; Hwang, Cheol Seong.
Afiliación
  • Chung MJ; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center , Seoul National University , Seoul 08826 , Republic of Korea.
  • Jeon W; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center , Seoul National University , Seoul 08826 , Republic of Korea.
  • An CH; Department of Materials Science and Engineering , Dankook University , Cheonan , Chungnam 31118 , Republic of Korea.
  • Kim SH; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center , Seoul National University , Seoul 08826 , Republic of Korea.
  • Lee YK; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center , Seoul National University , Seoul 08826 , Republic of Korea.
  • Lee W; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center , Seoul National University , Seoul 08826 , Republic of Korea.
  • Hwang CS; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center , Seoul National University , Seoul 08826 , Republic of Korea.
ACS Appl Mater Interfaces ; 10(10): 8836-8844, 2018 Mar 14.
Article en En | MEDLINE | ID: mdl-29468873
The atomic layer deposition (ALD) of multication oxide films is complicated because the deposition behaviors of the component oxides are not independent of one another. In this study, the Ti and Sr atom incorporation behaviors during the ALD of SrTiO3 films were quantitatively examined via the carefully designed ALD process sequences. H2O and O3 were adopted as the oxygen sources of the SrO subcycles, whereas only O3 was used for the TiO2 ALD subcycles. Apart from the general conjecture on the roles of the different types of oxygen sources, the oxygen source that was adopted for the subcycles of the other component oxide had almost complete control of the metal atom incorporation behaviors. This means that the first half-cycle of ALD played a dominant role in determining the metal incorporation rate, which revealed the critical role of the steric hindrance effect during the metal precursor injection for the ALD rate. O3 had almost doubled its reactivity toward the Ti and Sr precursors compared with H2O. Although these are the expected results from the common knowledge on ALD, the quantitative analysis of the incorporation behaviors of each metal atom provided insightful viewpoints for the ALD process of this technically important oxide material. Furthermore, the SrTiO3 films with a bulk dielectric constant as high as 236 were obtained by the Ru-SrTiO3-RuO2 capacitor structure.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
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Imprimir
XML
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article Pais de publicación: Estados Unidos