Ultraclean individual suspended single-walled carbon nanotube field effect transistor.

Liu, Siyu; Zhang, Jian; Nshimiyimana, Jean Pierre; Chi, Xiannian; Hu, Xiao; Wu, Pei; Liu, Jia; Wang, Gongtang; Sun, Lianfeng

Liu, Siyu; Zhang, Jian; Nshimiyimana, Jean Pierre; Chi, Xiannian; Hu, Xiao; Wu, Pei; Liu, Jia; Wang, Gongtang; Sun, Lianfeng.

Afiliación

Liu S; School of Physics and Electronics, Shandong Normal University, Jinan, 250258, People's Republic of China. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.

Nanotechnology ; 29(17): 175302, 2018 Apr 27.

Article en En | MEDLINE | ID: mdl-29442999

RESUMEN

In this work, we report an effective technique of fabricating ultraclean individual suspended single-walled carbon nanotube (SWNT) transistors. The surface tension of molten silver is utilized to suspend an individual SWNT between a pair of Pd electrodes during annealing treatment. This approach avoids the usage and the residues of organic resist attached to SWNTs, resulting ultraclean SWNT devices. And the resistance per micrometer of suspended SWNTs is found to be smaller than that of non-suspended SWNTs, indicating the effect of the substrate on the electrical properties of SWNTs. The ON-state resistance (â¼50 kΩ), mobility of 8600 cm2 V-1 s-1 and large on/off ratio (â¼105) of semiconducting suspended SWNT devices indicate its advantages and potential applications.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2018 Tipo del documento: Article Pais de publicación: Reino Unido

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