2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices.

Singh, S L; Singh, S B; Ghatak, K P

Singh, S L; Singh, S B; Ghatak, K P.

Afiliación

Singh SL; Department of Electronics and Communication Engineering, National Institute of Technology Manipur, Langol, Imphal 795001, Manipur, India.
Singh SB; Department of Computer Science Engineering, National Institute of Technology Manipur, Langol, Imphal 795001, Manipur, India.
Ghatak KP; University of Engineering and Management, Department of Electronic and Communication Engineering, New Town Kolkata 700156, West Bengal, India.

J Nanosci Nanotechnol ; 18(4): 2856-2874, 2018 Apr 01.

Article en En | MEDLINE | ID: mdl-29442967

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Año: 2018 Tipo del documento: Article País de afiliación: India Pais de publicación: Estados Unidos

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