Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers.

Timofeev, Vyacheslav; Nikiforov, Alexandr; Tuktamyshev, Artur; Mashanov, Vladimir; Yesin, Michail; Bloshkin, Aleksey

Timofeev, Vyacheslav; Nikiforov, Alexandr; Tuktamyshev, Artur; Mashanov, Vladimir; Yesin, Michail; Bloshkin, Aleksey.

Afiliación

Timofeev V; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk, 630090, Russia. Vyacheslav.t@isp.nsc.ru.
Nikiforov A; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk, 630090, Russia.
Tuktamyshev A; National Research Tomsk Polytechnical University, 36 Lenin Avenue, Tomsk, 634050, Russia.
Mashanov V; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk, 630090, Russia.
Yesin M; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk, 630090, Russia.
Bloshkin A; A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk, 630090, Russia.

Nanoscale Res Lett ; 13(1): 29, 2018 Jan 19.

Article en En | MEDLINE | ID: mdl-29352352

Palabras clave

Band diagram; Diffraction; Epitaxy; GeSiSn layer; Nanoislands; Photoluminescence; Scanning tunnel microscopy; Segregation; Superstructure

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2018 Tipo del documento: Article País de afiliación: Rusia Pais de publicación: Estados Unidos

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