Your browser doesn't support javascript.
loading
Temperature Dependence of Raman-Active In-Plane E2g Phonons in Layered Graphene and h-BN Flakes.
Li, Xiaoli; Liu, Jian; Ding, Kai; Zhao, Xiaohui; Li, Shuai; Zhou, Wenguang; Liang, Baolai.
Afiliación
  • Li X; College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China. xiaolixiaoli1999@126.com.
  • Liu J; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China. xiaolixiaoli1999@126.com.
  • Ding K; College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.
  • Zhao X; College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.
  • Li S; College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.
  • Zhou W; College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.
  • Liang B; College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.
Nanoscale Res Lett ; 13(1): 25, 2018 Jan 17.
Article en En | MEDLINE | ID: mdl-29344758
Palabras clave
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2018 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2018 Tipo del documento: Article Pais de publicación: Estados Unidos