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Oxygen Vacancy Dynamics at Room Temperature in Oxide Heterostructures.
Bao, Shanyong; Ma, Jing; Yang, Teng; Chen, Mingfeng; Chen, Jiahui; Pang, Shengli; Nan, Ce-Wen; Chen, Chonglin.
Afiliación
  • Bao S; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, P. R. China.
  • Ma J; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, P. R. China.
  • Yang T; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, P. R. China.
  • Chen M; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, P. R. China.
  • Chen J; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, P. R. China.
  • Pang S; Institute for Advanced Materials, Jiangsu University , Zhenjiang 212013, P. R. China.
  • Nan CW; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, P. R. China.
  • Chen C; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, P. R. China.
ACS Appl Mater Interfaces ; 10(5): 5107-5113, 2018 Feb 07.
Article en En | MEDLINE | ID: mdl-29333851
Oxygen vacancy dynamic behavior at room temperature in complex oxides was carefully explored by using a combined approach of ion liquid gating technique and resistance measurements. Heterostructures of PrBaCo2O5+δ/Gd2O3-doped CeO2 epitaxial thin films were fabricated on (001) Y2O3-stabilized ZrO2 single crystal substrates for systematically investigating the oxygen redox dynamics. The oxygen dynamic changes as response to the gating voltage and duration were precisely detected by in situ resistance measurements. A reversible and nonvolatile resistive switching dynamics was detected at room temperature under the gating voltage >13.5 V with pulse duration >1 s.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article Pais de publicación: Estados Unidos