Remote control of resistive switching in TiO2 based resistive random access memory device.
Sci Rep
; 7(1): 17224, 2017 12 08.
Article
en En
| MEDLINE
| ID: mdl-29222470
We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I-V characteristics. Essentially, in the presence of magnetic field and in the low resistance state, an abrupt change in the resistance of the device demands higher voltage, hinting that residual Lorentz force plays a significant role in controlling the resistance state. Endurance characteristics of the device infer that there is no degradation of the device even after repeated cycling, which ensures that the switching of resistance between 'off' and 'on' states is reproducible, reversible and controllable. Magnetic field control of 'on' and 'off' states in endurance characteristics suggest that this device can be controlled in a remote way for multi-bit data storage.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Tipo de estudio:
Clinical_trials
Idioma:
En
Revista:
Sci Rep
Año:
2017
Tipo del documento:
Article
País de afiliación:
India
Pais de publicación:
Reino Unido