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Critical switching current density induced by spin Hall effect in magnetic structures with first- and second-order perpendicular magnetic anisotropy.
Yun, Seok Jin; Lee, Kyung-Jin; Lim, Sang Ho.
Afiliación
  • Yun SJ; Department of Materials Science and Engineering, Korea University, Seoul, 02841, South Korea.
  • Lee KJ; Department of Materials Science and Engineering, Korea University, Seoul, 02841, South Korea.
  • Lim SH; Department of Materials Science and Engineering, Korea University, Seoul, 02841, South Korea. sangholim@korea.ac.kr.
Sci Rep ; 7(1): 15314, 2017 11 10.
Article en En | MEDLINE | ID: mdl-29127357
In this study, we derive analytical expressions for the critical switching current density induced by spin Hall effect in magnetic structures with the first- and second-order perpendicular magnetic anisotropy. We confirm the validity of the expressions by comparing the analytical results with those obtained from a macrospin simulation. Moreover, we find that for a particular thermal stability parameter, the switching current density can be minimized for a slightly positive second-order perpendicular magnetic anisotropy and the minimum switching current density can further be tuned using an external magnetic field. The analytical expressions are of considerable value in designing high-density magnetic random access memory and cryogenic memory.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2017 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Reino Unido
Texto completo
Añadir a Mi BVS
Imprimir
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PubMed Links
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2017 Tipo del documento: Article País de afiliación: Corea del Sur Pais de publicación: Reino Unido