Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors.

Chevallier, Romain; Haddadi, Abbas; Razeghi, Manijeh

Chevallier, Romain; Haddadi, Abbas; Razeghi, Manijeh.

Afiliación

Chevallier R; Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, 2220 Campus Drive, RM 4051, Evanston, IL, 60208-0893, USA.
Haddadi A; Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, 2220 Campus Drive, RM 4051, Evanston, IL, 60208-0893, USA.
Razeghi M; Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, 2220 Campus Drive, RM 4051, Evanston, IL, 60208-0893, USA. razeghi@eecs.northwestern.edu.

Sci Rep ; 7(1): 12617, 2017 10 03.

Article en En | MEDLINE | ID: mdl-28974769

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido

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