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An Unusual Mechanism for Negative Differential Resistance in Ferroelectric Nanocapacitors: Polarization Switching-Induced Charge Injection Followed by Charge Trapping.
Li, Peilian; Huang, Zhifeng; Fan, Zhen; Fan, Hua; Luo, Qiuyuan; Chen, Chao; Chen, Deyang; Zeng, Min; Qin, Minghui; Zhang, Zhang; Lu, Xubing; Gao, Xingsen; Liu, Jun-Ming.
Afiliación
  • Li P; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Huang Z; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Fan Z; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Fan H; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Luo Q; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Chen C; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Chen D; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Zeng M; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Qin M; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Zhang Z; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Lu X; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Gao X; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
  • Liu JM; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University , Guangzhou 510006, China.
ACS Appl Mater Interfaces ; 9(32): 27120-27126, 2017 Aug 16.
Article en En | MEDLINE | ID: mdl-28741922
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
Añadir a Mi BVS
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2017 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos